Taiwan Semi Still Buying Land for 2nm Fab
Taiwan Semiconductor (TSM) received governmental OK to build a 2nm fab back in July of last year and has been in negotiations with landowners in Hsinchu, the site of the new fab. According to local press, ~90% of landowners have agreed to the purchase, with final agreements expected to be made this month. Construction will start in July or August and is expected to take ~1 year to build the physical fab, with equipment move-in and testing to take an additional year, leading to trial production in 3Q 2024 and mass production in early 2025. Original plans were mass production in late 2024 or early 2025
The fab is said to have potential for four 12” lines, although it is expected to be built out in 4 phases, and while total fab capacity has not been specified, it is expected that the total fab capacity when fully built out will be ~100,000 wpm. The fab is expected to use GAA (Gate All-Around) architecture, similar to Samsung’s (005930.KS) GAA 3nm process, which has proven difficult for Samsung to implement thus far.
The fab is said to have potential for four 12” lines, although it is expected to be built out in 4 phases, and while total fab capacity has not been specified, it is expected that the total fab capacity when fully built out will be ~100,000 wpm. The fab is expected to use GAA (Gate All-Around) architecture, similar to Samsung’s (005930.KS) GAA 3nm process, which has proven difficult for Samsung to implement thus far.
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